FCU900N60Z mosfet equivalent, n-channel mosfet.
* 675 V @ TJ = 150°C
* Typ. RDS(on) = 820 mW
* Ultra Low Gate Charge (Typ. Qg = 13 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 48.6 pF)
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such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
* 675 V @ TJ .
SuperFET® II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimiz.
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